IXYS Corporation (NASDAQ: IXYS), a manufacturer of power semiconductors and integrated circuits for energy efficiency, power management, and motor control applications, announces an expansion of its high-voltage Power MOSFET product portfolio: 2000V N-Channel Power MOSFETs. With a current rating of 1A, they are specifically designed for high-voltage, high-speed power conversion applications.
Due to the positive temperature coefficient of their on-state resistance, these high-voltage Power MOSFETs can be operated in parallel, thereby eliminating the need for lower-voltage, series-connected devices and enabling cost-effective power systems. Other benefits include component reduction in gate drive circuitry, simpler design, improved reliability, and PCB space saving.
These new Power MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, laser and x-ray generation systems, high-voltage automated test equipment, and energy tapping applications from the power grid.
The 2000V Power MOSFETs are available in the following international standard size packages: TO-247, TO-247HV, and TO-263HV. The latter two have increased creepage distances between leads, making them possible to withstand higher voltages. The part numbers include IXTH1N200P3, IXTH1N200P3HV, and IXTA1N200P3HV.
For further information, please contact Stuart Hanford on:
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