OptiMOS™ Linear FET combines a low RDS(on) with a large Safe Operating Area

Thursday, September 28, 2017

 

Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) recently launched the OptiMOS™ Linear FET series. This new product family combines the state-of-the-art on-state resistance (R DS(on)) of a trench MOSFET with the wide safe operating area of a planar MOSFET. This solves the trade-off between R DS(on) and linear mode capability. The OptiMOS™ Linear FET can operate in the saturation region of an enhanced mode MOSFET. It is the perfect fit for hot-swap, e-fuse, and protection applications commonly found in telecom and battery management systems (BMS).

Both, the rugged linear mode operation and the higher pulse current contribute to low conduction losses, faster start-up, and shorter down time. The OptiMOS™ Linear FET prevents damage at the load if there is a short circuit, by limiting high in-rush currents.

 

Availability

The OptiMOS™ Linear FET is available now in three voltage classes: 100 V, 150 V, and 200 V. They can be supplied in either a D²PAK or D²PAK 7pin package. These industry standard packages offer a compatible footprint for drop-in replacement. For more information please contact:

 

Dirk Venter
Engineer: Field Application
Arrow Altech Distribution

DVenter@arrow.altech.co.za
+27 (0) 11 923 9666
+27 (0) 82 339 8648